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We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal–insulator–semiconductor–insulator–metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better...
A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal–semiconductor–metal (MSM)-type GaN UV sensor and a standard Si CMOS APS controller. The photodetector region of the APS circuit was replaced by a GaN MSM UV sensor, and it was connected together on the printed circuit board with standard Si CMOS APS circuit chip. The dark and photoresponsive current...
We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity
We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al2O3 and SiO2 were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with...
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