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The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
The effect of bias modulation on the nonlinear response of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) with a high third-order intercept point (IP3) larger than 50 dBm is characterized using a bias modulation measurement setup. An analytical equivalent circuit model is developed to explain the frequency characteristics of the intermodulation distortions produced by the bias modulation...
Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. At 310 MHz modulation frequency the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Voltage dependent nonlinear responsivity is found to be the limiting factor for the IP3 at low frequency, while...
The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent...
The operation and performance of 34-mum-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100 mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize...
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