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In this letter, we optimize and investigate for the first time the effect of source/drain spacer oxide on the performance of a dual gate ambipolar silicon nanowire field effect transistor. Using extensive 3-D TCAD simulations, we show that the OFF-state leakage can be reduced by more than two orders of magnitude owing to the combined use of HfO2 spacer and high-$\kappa $ gate dielectric, resulting...
HEMT as a microwave component has undergone a lot of experimentation for the last three decades since its invention at Bell labs by Takashi Mimura. InAlN has proved to be an extremely useful ternary semiconductor compound for its excellent scalability and high breakdown field[1] and turned out to be an ideal replacement for AlGaN as barrier for modern day HEMT's. In this paper we report a 20nm InAlN/AlN/GaN...
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