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Hexagonal GaN film has been grown on (001) GaAs substrate with nitridized AlAs buffer layer. The (0001) plane of the hexagonal GaN(h-GaN) is parallel to the (001) plane of the GaAs substrate. The nitridized AlAs/GaAs(001) material was analyzed by high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM). The HRTEM observations show that hexagonal AlN(h-AlN) can nucleate...
Hexagonal gallium nitride (h-GaN) films have been grown on AlAs nucleation layer by using radio frequency (RF) plasma source-assisted molecular beam epitaxy on GaAs (001) substrate. Transmission electron microscopy (TEM) techniques are used to characterize such h-GaN epilayers. TEM results show that (0001) atom planes of h-GaN are parallel to (001) atom planes of the GaAs substrate. Defects, such...
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