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Heterojunction (HJ) devices have been realized by depositing gallium-doped Ge nanocrystals (Ge-ncs) on an n-type crystalline silicon substrate. Transmission electron microscopy (TEM) and Raman spectroscopy have revealed that the Ge-ncs were formed in SiO2 matrix, with sizes in the range of 3.5-6.2 nm. The rapid thermal annealing for dopants activation of Ge-ncs in SiO2 matrix was investigated by four...
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated...
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