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We propose and experimentally demonstrate photonic measurement of microwave frequency by utilizing an optomechanical microring resonator (MRR). The pump powers injected into the MRR would result the resonance red-shifts based on nonlinear effects. In the case of optical single sideband modulation, the frequency intervals between the optical carrier and the corresponding MRR resonance are tunable....
In this presentation, we proposed an all-optical broadband THz modulator based on single-layer graphene (SLG) on silicon. By illuminating the film with CW laser, the THz transmission decreased significantly. The modulation speed was measured at 340GHz to be as high as 0.5 MHz. This modulator has huge potential for real application.
A 80.8-GHz CMOS divide-by-4 direct injection-locked frequency divider (DILFD4) using tunable LC source-degeneration (TLCSD) for operation frequency and locking-range enhancement is demonstrated. The TLCSD is made by adding two tunable LC tanks, where varactors are used as the required capacitors, to the source terminals of the cross-coupled transistor pair of the DILFD4. Compared with the traditional...
A 58-GHz (V-band) CMOS direct injection-locked frequency-divider (DILFD) using input-power-matching technique for locking-range enhancement is reported for the first time. In an input-power-matching technique, an inductive input-matching-network is added to the gate of the NMOS switch to optimize the input-power-matching, i.e. to maximize the internal power, over the frequency band of interest. This...
A low-power low-phase-noise 48-GHz CMOS LC voltage-control oscillator (VCO) and a low-power 60-GHz CMOS low-noise amplifier (LNA) for 60-GHz dual-conversion receiver are reported. The VCO dissipated 5.556 mW power, and achieved state-of-the-art phase noise of -105 dBc/Hz at 1-MHz offset from 47.84 GHz. The corresponding figure-of-merit (FOM) was -191.1 dBc/Hz, which is better than those of the reported...
A low-power and wide-locking-range 55.8-GHz (V-band) injection-locked frequency-divider (ILFD) using standard 0.13 mum CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross-coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition,...
A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay-variation is only plusmn17.4 ps across the whole band) using standard 0.18 mum CMOS technology is reported. To achieve high and flat gain and small group-delay-variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA...
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