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The passivation of the Ge interface is a key issue in the fabrication of Ge MOSFETs. Recently, the poor reliability of Ge/GeO2/Al2O3 MOSFETs was attributed to the border traps in Al2O3. We here propose a Ge/GeO2/AlN stack model with AlN as buffer layer for more reliable Ge MOSFETs. Calculation suggests that AlN has the advantage of fewer border traps in the relevant energy range, high oxygen diffusion...
To date, gate stacks for high mobility semiconductors like Ge and InGaAs have been generally designed to minimise their interfacial trap density, and thus include an Al oxide layer diffusion barrier as a component. However, this is now known to lead to reduced reliability. The source of the problem is discussed and possible solutions based on an AlN or AlON layer component are suggested instead. First,...
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