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Black phosphorus(b-P) is a new member of 2D materials for field effect transistor(FET) application due to its atomic monolayer structure and high electron/hole mobility. The FET application requires the knowledge of b-P interface with high-k oxide and metal electrodes. In this work, the band offsets for gate insulators such as HfO2 on black phosphorus (b-P) are calculated using density functional...
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