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A new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology was developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of operating with supply voltages up to 32 V. Generation 2 HVHBT technology maintains the same high level of efficiency and compatibility with Digital Pre-Distortion...
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