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Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10–30 keV and fluencies D = (0.2–5.4) ×1016 cm–2. The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper–oxygen stoichiometry of the observed surface layer was close to Cu2O oxide...
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