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This paper is devoted to present the results of creation of gold nanoparticles on titanium surface. We focused on the problem how to create gold nanoparticles on the titanium surface with defined particle size and distribution, which could be interesting for several applications (e.g. providing well-defined substrates for biomedical research, etc.). To do that the sample is affected by the complex...
Interdiffusion in polycrystalline Pd–Cu thin film system was investigated in the temperature range of 120–310 °C, by means of SNMS depth profiling technique. Depending on the annealing parameters, an almost complete homogenization was detected even at temperatures, where the volume diffusion was frozen in. In the Pd layer, the detected Cu profiles and their time evolution were typical C-kinetic regime...
In this study the possibility of the fabrication of CIGS layers from stacked precursors with selenization is examined. Different sequences of precursor layers and two different selenization methods were applied, in order to establish the optimal order of Cu, In and Ga layers in the precursor layer stack. The obtained CIGS films were studied by different micro- and surface analysis methods (TEM, SEM,...
Low temperature analysis of diffusion and intermixing of Co–Si systems are very important in applications for microelectronics and Ultra Large Scale Integration (ULSI). In this communication a comprehensive report has been given on degradation and diffusion processes in the Si(substrate)/Co(150 nm)/Ta(10 nm) system. The samples were prepared by DC magnetron sputtering and were annealed in argon ambient...
Depth profile analysis of solar cells was performed by Secondary Neutral Mass Spectrometry (SNMS), which is a suitable technique for quantitative analysis of the composition of layered structures. However, in the case of insulating samples or samples prepared on non-conductive substrates (e.g. microslide, oxidized silicon wafer) the charge accumulation on the sample surface due to ion beam bombardment...
In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H 2 gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He + beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere...
Proper understanding of the degradation mechanisms and diffusion kinetics of copper and cobalt interconnections for advanced microelectronics is important from the point of view of fundamental research and technology as well. In this paper Si(substrate)/Ta(10nm)/Cu(25nm)/W(10nm) and Si(substrate)/Co(150nm)/Ta(10nm) samples, prepared by DC magnetron sputtering, were in investigated. The samples were...
Proper understanding of the degradation mechanisms and diffusion kinetics of copper and cobalt interconnections for advanced microelectronics is important from the point of view of fundamental research and technology as well. In this paper Si(substrate)/Ta(10nm)/Cu(25nm)/W(10nm) and Si(substrate)/Co(150nm)/Ta(10nm) samples, prepared by DC magnetron sputtering, were in investigated. The samples were...
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H–Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6ml/min H 2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration...
Electromagnetic properties of doped perovskites depend sensitively on the doping level. Both the superconducting transition temperature of Bi 2 Sr 2 Ca(Pr)Cu 2 O 8+δ compounds and the magnetic and electronic transport properties of La(Sr)Co(Fe)O 3 perovskites change dramatically with the doping level. Apart from doping, oxygen deficiency is influenced by the...
One of the most important processes in Cu metallization for highly integrated circuits is to fabricate reliable diffusion barriers. Recently, thin films made of refractory metals and their compounds have been widely used in solid-state electronics as barriers because of their good electric properties, favourable thermal properties and chemical stability. Thermal stability of Tantalum (Ta) and Tantalum-oxide...
Diffusion on the nanoscale in multilayer, thin films has many challenging features even if the role of structural defects can be neglected and ‘only’ the effects related to the nanoscale arise. Recently, we have discovered different examples for diffusional nanoscale effects, which are summarized in this contribution. Interface shift kinetics may be different from the ones predicted by continuum approximations...
The overall quality of multilayer thin films prepared by electrodeposition could strongly be influenced by the surface and interface roughness. The roughness, however, may increase with the number of layers. For that very reason the reliable analysis of the first few layers is essential. However, in depth profiling methods based on sputtering techniques the first layer is always found at the bottom...
Amorphous silicon materials and its alloys became extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry...
Thermal annealing of Si/Si 1−x Sb x /Si amorphous thin-film tri-layer samples (x=18 and 24at%Sb) under 100bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy, stripe-shaped contrast, with three maxima, parallel to the interfaces can be seen. Secondary neutral mass spectrometer measurements...
Measurements providing experimental evidence for linear interface shift and interface sharpening, as typical diffusion phenomena on a nanoscale, in different bi- or multilayer systems (Si/Ge, Cu/Ni, Mo/V) and results of computer simulations are presented on the basis of the research experience of our group. Special emphasis is given to sample preparation and measuring techniques capable of diffusion...
Microstructure changes during annealing of nano-crystalline silver and amorphous silicon multilayers (Ag/a-Si) have been studied by X-ray diffraction and transmission electron microscopy. The dc-magnetron sputtered Ag/a-Si multilayers remained stable even after annealing at 523K for 10h, and microstructural changes occurred only above 600K. The degradation of Ag/a-Si multilayers can be described by...
The crystallization of amorphous SiSb mono-, Si/SiSb/Si tri- and Si/SiSb multilayers, carried out at 883K under different hydrostatic pressures has been investigated by cross-sectional transmission electron microscopy (TEM). After annealing crystallization of the amorphous SiSb layer was observed, while the pure Si layer remained amorphous. It was observed that hydrostatic pressure and the initial...
Compositionally modulated amorphous Si-Ge thin films with repeat lengths between 2.5 and 9nm have been prepared using magnetron sputtering. The interdiffusion coefficient (D) was determined from the change in the small angle X-ray diffraction satellite (SAXRD) intensities. Experimental results confirm the theoretically predicted strong concentration dependence of the interdiffusion coefficient. It...
We measured the complex susceptibility of two different quality magnetron sputtered YBa 2 Cu 3 O 7−x films in RF range. Temperature and static magnetic field dependence of complex magnetic susceptibility is a useful indicator of appearance of phase coherence in the film including fluctuation region above T c . The characteristics showed a low frequency type behaviour...
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