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The scaling of MOSFETs has improved performance and lowered the cost per function of CMOS integrated circuits and systems over the last 40 years, but devices are subject to increasing amounts of statistical variability within the deca-nano domain. The causes of these statistical variations and their effects on device performance have been extensively studied, but there have been few systematic studies...
The in-band OSNR of SP and DP QPSK signals were measured over a range of 10 to 21dB ±1dB using a pair of polarisation independent Michelson fibre interferometers without the requirement for prior knowledge of the signal's coherence properties.
This paper focuses on two main types of MOSFET variability - systematic (process) and statistical (random) variability and discusses the use of process corners as a measure of yield and circuit performance. We provide a methodology for performing large-scale statistical SPICE simulations as a means of evaluating the accuracy of corners in a system dominated by statistical variability and then expand...
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