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Indium nitride (InN) thin films have been deposited on Si(100) and Pt(111)/Ti/SiO 2 /Si(100) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 o C, InN films with (0002) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated...
An overview on the state-of-art piezoelectric measurements of thin films is given. The principles and advantages/disadvantages of the conventional techniques are discussed for piezoelectric applications. Concerning a direct measurement of piezoelectric coefficient and taking into account of 1.0-100.0μm in film thickness, a displacement of 0.1nm cannot be reliably detected by utilizing the reverse...
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