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Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead...
Static induction thyristor and silicon-carbide junction FET have been studied for applications to high-voltage modulators that are demanded by a new type of high-energy particle accelerator, the induction synchrotron. The switching characteristics of these power semiconductor devices are evaluated in order to assess their applicability to MHz level repetitive operation.
At low energy region of high current ion accelerators, ion beams must be low current and longitudinally compressed with time to avoid space charge explosion. This means that we have to make a carefully programmed voltage waveform. We propose a voltage synthesis scheme for induction modules to make the waveform shaping and repetitive operation. In this scheme, the voltage is stacked and synthesized...
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