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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of fixed charges and leakage currents. We address these issues mostly from...
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