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Photovoltaic properties of nitrogen doped amorphous carbon (a-C:N) thin films deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (<100 degC) are analyzed in this section. Argon (Ar: 200 sccm), methane (CH4:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively...
The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C 10 H 16 O) dissolved...
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