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Low temperature grown p-AlGaN layer with a small resistivity is crucial to improve the performance of the GaN-based laser diodes (LDs). In this study, growth temperature of the p-AlxGa1-xN (0.08 ≤ x ≤ 0.104) layers are controlled to be relatively low, and the influence of hydrogen impurity on the resistivity is investigated in detail. According to the dependence of hole concentration and resistivity...
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