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Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to...
The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.
We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350 mA. Using optimized taper configuration, the beam divergence and the coupling losses are reduced down to 18degtimes22deg and ~ 3 dB, respectively. It opens the way to...
Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ~7 are measured.
A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
We investigate the devices performances of InAs/InP (100) quantum dash buried stripe ridge lasers. We demonstrate high-gain quantum dash based lasers whose dynamic properties are compatible with high-speed devices requirements. The good temperature characteristic of such lasers allows 10 Gb/s direct modulation in the temperature range of 25-75degC. The mode-beating RF spectrum of passively locked...
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