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Deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and L-DLTS combined with uniaxial stress have been used in this work for characterization and identification of electrically active defects induced in Sb-doped germanium crystals by irradiation with fast neutrons. The samples were irradiated with relatively small doses of neutrons (≤5×10 11 cm −2 ) in order...
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