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This paper is based on the investigation of electrically active defects in dual band UV/IR photodiodes using Deep Level Transient Spectroscopy (DLTS). The UV/IR photodiodes were fabricated by growing Al0.7Ga0.3N layers on silicon substrate to obtain UV‐ sensitive photodiode structures on the front side, whereas on the back side of silicon IR‐sensitive photodiode structures were fabricated. Our studies...
In this work we present the growth and characterization of InxGa1–xN‐based materials and solar cells with x up to 0.39. The bandgap of the layers is determined by contactless electroreflectance, which indicates a substantial Stokes shift compared to photoluminescence measurements. Time‐resolved photo‐luminescence was used to confirm the existence of carrier localization phenomenon in the films. Fabricated...
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