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With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested
SRAM sense amplifier plays a key role in memory design. With technology scaling to the nanometer, the device mismatch increases and the distribution effect induces unstable signal injection, thus affecting the reliability of memory system. This paper presents a new method for SRAM sense amplifier design. It incorporates reasonable delay between the passgate and enable signals to effectively mitigates...
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