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A 32-Mb SPin-transfer torque RAM (SPRAM) chip was demonstrated with an access time of 32 ns and a cell write-time of 40 ns at a supply voltage of 1.8 V. The chip was fabricated with 150-nm CMOS and a 100 ?? 200-nm tunnel magneto-resistive (TMR) device element. A required thermal stability of 67 of the TMR device was estimated by taking into account the disturbances during read operations and data...
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