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In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing...
While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on Si substrates [1-3], the challenges in material quality and efficiency remain to be solved. Turning the Group-IV material into a direct semiconductor for CMOS compatible concepts [4] promises enhanced electrical to optical conversion efficiencies. However, the red-shift in emitting wavelength...
We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with tunneling in line with the gate field. Compared to vertical Si TFETs without this geometry modification, on-currents are increased by more than one order of magnitude with at ...
The tunneling field effect transistor (TFET) is a device concept that has the potential to outperform CMOS technology both in energy efficiency and speed. One of the challenges for this device concept is to improve on-currents to meet industry standards. In order to attain this goal, a number of modifications to the basic design, concerning both material as well as geometry variations, have been proposed...
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