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We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
This paper describes a CELP speech-coding algorithm which makes use of a specific signal classifier especially designed for this purpose. The classification method is based on the Dyadic Wavelet Transform (DyWT) and has proved to be superior to common classifiers that use the open-loop long-term prediction gain for mode selection. The classifier's output is used for the control of several coder parameters,...
This paper presents an antenna in package (AiP) solution with embedded wafer level ball grid array (eWLB) packaging technology. The antenna implements superstrate structure configuration. A cavity in the PCB is introduced below the antenna area is introduced to increase the distance between antenna and ground on the PCB. This extends the relative bandwidth of the AiP by up to 36% for 10 dB return...
We demonstrate the increase of available collector emitter voltage of integrated vertical bipolar transistors by means of an additional lateral drift region introduced between sub collector and collector contact region. The chosen approach enables the fabrication of high voltage bipolar transistors for RF power applications alternatively to the construction of deep collector wells in vertical direction...
Addressing applications such as high performance RF power amplifiers and DC/DC converters with high conversion efficiency we demonstrate a cost effective integration of a complementary medium voltage RF LDMOS module in a 0.25 μm base CMOS flow. The integration of the NLDMOS and PLDMOS transistors requires just three additional mask steps. The NLDMOS has an excellent large signal RF performance...
The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication...
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