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This poster explores the influence of tip curvature on field electron emission characteristics. We look at predicted changes in: Fowler-Nordheim plots (which tend to become curved); the dependence of notional emission area on voltage; and the slope and intercept correction functions.
Si nanowires suitable for MOS transistors used for large area display applications have been fabricated. They were grown using vapor-liquid-solid (VLS) growth. All important characteristics of the nanowire are controlled. The wire diameter is controlled by patterning the substrate prior to the wire growth. Over 99% of the nanowires grow in the <111> direction vertical to the <111> substrate...
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