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A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimental demonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, high frequency and relatively high voltage operations which are desirable in HEV/EV system. The proposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dt controllability with variations...
In this paper, a high voltage SiC MOSFET module with series-parallel hybrid topology is presented and analyzed. The module consists of two uniform parts in parallel and each of the part includes three sub-parts in series. The sub-part contains three primary parts connected in string where each of these parts has a parallel of two SiC MOSFETs. These SiC MOSFETs are divided into six sub-modules, which...
In this paper, a new series connection topology is introduced for silicon carbide (SiC) MOSFETs. In the topology, with a single external gate drive, three series-connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated...
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