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The positron annihilation lifetime spectroscopy was applied to study controlled crystallization processes in 80GeSe2−20Ga2Se3 chalcogenide glass, which was thermally treated at 380°C for 10, 50 and 100 h. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related...
Crystallization behaviour of 80GeSe 2 –20Ga 2 Se 3 glass caused by thermal annealing at 380°C for 10, 25 and 50h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in...
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