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The photocurrent generation of nanometric Ge droplets has been investigated by using electrochemical measurements. Dots have been grown by annealing Ge layers of different nominal thicknesses (ranging from 0.5 to 5 nm) deposited on clean SiO 2 surface at room temperature. The photocurrent signals for the largest dots show features, which can be ascribed to the Ge nanocrystals direct electronic...
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