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Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3...
Simulative and comparative study on the effects of multi quantum well (MQW) design parameters on the gain and threshold current of an InP-based, 1.5-mum vertical-cavity surface-emitting laser (VCSEL) is presented in this paper.
In this paper, we present the effects of self-heating on the characteristics of a gain-guided long-wavelength vertical- cavity surface emitting laser (LW-VCSEL) virtual model. The device employs InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors modeled using an industrial-based numerical simulator. We were able to obtain a working model at an optical...
The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical...
Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere...
In this paper, we attempt to design, simulate and characterize an InGaAs-based vertical-cavity surface-emitting laser (VCSEL) employing InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors using an industrial-based numerical simulator. We were able to obtain a working model at an optical wavelength of 1.55 mum. This paper provides key results of the...
A novel purely diffusion-based In0.53Ga0.47As lateral PIN photodiode was successfully modeled. Device dimensions are 12 times 1.8 mum2 with electrode spacing of 1.5 mum and width of 1 mum. The effective intrinsic region width is ~0.2 mum. The 2D modeled device achieved responsivity of 0.765 AAV and -3 dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks...
We investigated the microscopic view of electron captured in a lateral PIN InGaAs photodiodes which was implemented on an H electrode structure. The results illustrated a near ideal generated current with minimal delay time. We assumed the structure was implemented in a 10 Gbps, 30 Gbs and 50 Gbps network with a PIN sensitivity of 30 dBm with incident light power at 0.1 mW. The sizes of the electrodes...
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