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Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3...
Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere...
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