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The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical...
A novel purely diffusion-based In0.53Ga0.47As lateral PIN photodiode was successfully modeled. Device dimensions are 12 times 1.8 mum2 with electrode spacing of 1.5 mum and width of 1 mum. The effective intrinsic region width is ~0.2 mum. The 2D modeled device achieved responsivity of 0.765 AAV and -3 dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks...
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