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Molecular beam epitaxial growth and photoluminescence (PL) properties of SnTe/PbTe/CdTe double quantum wells (DQWs) on (100)-oriented GaAs substrates are reported. These DQWs were consisted of a very thin SnTe/PbTe QW nested in a 10-nm-thick PbTe/CdTe QW. Efficient midinfrared PL was observed from the DQWs at 300K in agreement with the coherent SnTe/PbTe growth on the thick CdTe barrier layer. The...
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