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The precursor containing peroxotungstic acid (PTA) was prepared by the reaction of tungstic acid with H 2 O 2 (30%) solution in water-ethanol mixture. This was utilized for the deposition of WO 3 .nH 2 O film on conducting (F-doped SnO 2 coated) flat glass substrate by the dipping technique. The films were cured in the temperature range of 200-300 o ...
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