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This paper presents a wideband and high power-handling single-pole four-throw (SP4T) switch IC using InGaAs/InP composite-channel (CC) HEMTs. Owing to the CC structure with an InAlP barrier, the input power for P1dB of 19.4 dBm is 6 dB higher than that of our conventional InGaAs single-channel HEMT switch, with identical wideband performance of ~40 GHz.
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