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Silicidation processes in nanoscale Ni and CoNi (5at.% Ni) layers on different silicon substrates were investigated using X-ray diffraction. The phase formation sequences as well as the formation and transition temperatures between 200 and 750 o C were studied. The impact of different silicon substrates, i.e., polycrystalline Si and (100) oriented Si single-crystal substrates as well as the...
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