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We fabricated 400nm thick ZnO films by RF magnetron sputtering on Si (100) substrates. The eight samples were implanted by 40keV Co+ ions at different fluences varying from 0.25×1017 ions/cm2 to 2.0×1017 ions/cm2. The XRD technique was applied to analyze the crystal structure of virgin and implanted samples. X-ray patterns show that the virgin sample has reflection peaks that originate from the (100)...
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