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We analyze the optical gain of tensile-strained, n-germanium (n-Ge) material taking bandgap narrowing (BGN) for heavily doped Ge into account. Both the direct bandgap and indirect bandgap are narrowed by 60 meV. Our new modeling explains the wide lasing spectrum of 1520–1700 nm in electrically pumped Ge lasers. The calculated materials gain can reach 1000 cm when the injected carrier density...
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