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Self-organized Ge/Si quantum dots (QD's) in strained Si/Ge short-period superlattices are studied by Raman scattering under hydrostatic pressure excited in-resonance and off-resonance with the confined Ge-like E 1 transition of Ge using 488 and 514.5 nm lines from an argon-ion laser and 632.8 nm line from a He–Ne laser. The Raman spectra of Ge–Ge, Si–Ge and Si-2TA modes of the QD's were obtained...
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