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Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power (1 μA@1.12 V) was obtained in the HfO2/TiOx resistive random-access memory (RRAM) devices by controlling the oxygen content of the TiOx layer. Besides,...
In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset...
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