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This paper discusses the optimization of the growth temperature and Sb/In ratio of 1 µm InSb thin films grown on GaAs substrates by molecular beam epitaxy due to the InSb materials with larger lattice constants have smaller growth windows. The results show that atomic steps can be clearly seen in InSb thin films grown at 420 °C with a Sb/In ratio of 6. The InSb material grown under this condition...