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We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB up to 140GHz, and isolation is better than...
Different MEMS process techniques have been integrated to 0.25 μm BiCMOS process. First developed technique is Back-End-Off-Line (BEOL) integration. This technique was developed using standard metallization layers of BiCMOS process with an additional MEMS process steps. An RFMEMS capacitive switch was realized using BEOL embedded MEMS module. Back-side substrate etch method was developed as second...
We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ??off?? to ??on?? capacitance ratio is 1:10 providing excellent isolation in the mm-wave frequency range. Insertion loss and isolation...
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