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Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) is a well established process for compound semiconductor layer growth especially of III-V semiconductors as InP, GaAs, and the nitrides GaN or AlN. In the case of the nitrides one can obtain highly oriented a-plane piezoelectric material, well suited for shear-microwave applications, by tilting the c-axis of the piezoelectric unit cell by 90deg to result in...
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