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Low-temperature Si barrier growth with atomically flat heterointerfaces was investigated in order to improve negative differential conductance (NDC) characteristics of high-Ge-fraction strained Si 1−x Ge x /Si hole resonant tunneling diode with nanometer-order thick strained Si 1−x Ge x and unstrained Si layers. Especially to suppress the roughness generation...
The relaxation of strain in Si/Si 1−x Ge x /Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line,...
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