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Nitrogen atomic-layer (N AL) doping effects upon hole tunneling characteristics of double 4nm-thick Si barriers in the strained Si1−xGex/Si(100) hole resonant tunneling diode (RTD) were investigated. At a Si cap layer on Si1−xGex(100) (x=0.2 and 0.4) formed at 500°C, it was found that NH3 reaction was drastically enhanced at 500°C especially at the Si cap layer thickness less than 0.5nm, and the fact...
Low-temperature Si barrier growth with atomically flat heterointerfaces was investigated in order to improve negative differential conductance (NDC) characteristics of high-Ge-fraction strained Si 1−x Ge x /Si hole resonant tunneling diode with nanometer-order thick strained Si 1−x Ge x and unstrained Si layers. Especially to suppress the roughness generation...
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