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In situ heavy doping and atomic layer doping of B, P, and C in low‐temperature Si1−xGex epitaxial growth on the Si(100) surface by chemical vapor deposition are reviewed. The epitaxial growth, in situ doping, and atomic‐layer formation processes are explained quantitatively based on Langmuir adsorption and reaction scheme. The atomic layer doping is performed by atomic layer formation of B, P, and...
The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si1-xGex (100) surfaces, is achieved at temperatures below 500°C. B doping dose of about 7× 1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier...
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