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n-GaN/AlxGa1-xN/n-GaN (n-I-n) heterostructure devices are investigated for potential applications as pressure sensors in extreme environments. Theoretical modeling of n-In sensors performed with various compositions (x equiv 0.1, 0.15, & 0.2) and thicknesses (10 nm and 20 nm) of AlxGa1-xN suggests that electrical current will decrease with increasing pressure and this effect becomes more significant...
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