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HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated from traditional semiconductors such as GaAs and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 V, and have been biased as high as 120 V using device designs that make use of field-plate technology. However,...
Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs and InP-based devices. The critical electric fields for avalanche ionization in wide bandgap semiconductors, such as SiC and GaN, are about an order of magnitude greater than for traditional semiconductors such as Si, GaAs, and InP. Nitride-based HFET's can support...
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