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The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10−2 Ω cm for 12.5% O2, which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron...
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