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Fe is deposited on a single crystal bulk Si (100) and separated by implanted oxygen (SIMOX) substrate by the use of ion beam sputter deposition (IBSD) method to form β-FeSi 2 film. Photoluminescence (PL) is measured for these films, after the films on Si substrate are thermally annealed at 1153K for 24h. The PL intensity at around 0.83eV dramatically increased. Such feature has not been seen...
Sputter etching (SE) is a suitable treatment of Si surface to synthesize highly oriented β-FeSi 2 films on the substrate, although SE produces amorphous layers in the surface. We have investigated the effect of surface amorphous layer on orientational ordering of formed β-FeSi 2 and the optimum energy of Ne + SE for highly oriented β-FeSi 2 film. The energy ranges from...
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