The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Recent device developments and achievements have demonstrated that planar undoped channel Fully depleted SOI devices are becoming a serious alternative to Bulk technologies for 20nm node and below. We have proven this planar option to be easier to integrate than the non planar devices like FinFET. This paper gives an overview of the main advantages provided by this technology, as well as the key challenges...
In this paper, a new ultra-thin body and BOX (UT2B) fully-depleted (FD) silicon-on-insulator (SOI) device architecture based on a stacked back plane (BP) and WELL below the BOX is presented. The proposed device has been developed to boost the gate-to-channel electrostatic control and to be compatible with the adaptive body biasing (ABB) techniques for low power applications. The concept viability...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.